Temperature dependence of photoluminescence from self-organized Ge quantum dots with large size and low density
Photoluminescence (PL) from self-organized Ge quantum dots (QDs) with large size and low density has been investigated over a temperature range from 10 to 300 K using continuous-wave (CW) optical excitation. The integrated PL intensity of QDs observed is negligible at about 10 K and rapidly increases with raising temperature up to 100 K. Through analyzing the PL experimental data of the QDs and wetting layer (WL), we provide direct evidence that there exists a potential barrier, arising from the greater compressive strain surrounding large QDs, which could trap carriers in WL at low temperatures and could be overcome via increasing temperature.
Ge quantum dots PL AFM thermal quenching activation energy
LI Hui HE Tao DAI LongGui WANG XiaoLi WANG WenXin CHEN Hong
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
国际会议
北京
英文
245-248
2010-04-27（万方平台首次上网日期，不代表论文的发表时间）