A generalized Norde plot for reverse biased Schottky contacts
When a metal makes intimate contact with a semiconductor material, a Schottky barrier may be created. The Schottky contact has many important applications in the IC electronics field. The parameters of such contacts can be determined from their current-voltage (I-V) characteristics. The literature contains many proposals for extracting the contact parameters using graphical methods. However, such methods are generally applicable only to contacts with a forward bias, whereas many Schottky contacts actually operate under a reverse bias. Accordingly, the present study proposes a generalized reverse current-voltage (I-V) plot which enables the series resistance R, barrier heightφ, and ideality factor n of a reverse biased Schottky contact to be extracted from a single set of I-V measurements. A theoretical derivation of the proposed approach is presented and a series of validation tests are then performed. The results show that the proposed-method is capable of extracting reliable estimates of the contact parameters even in the presence of experimental noise.
contact parameters Norde plot reverse bias Schottky contact
Chin-Min Hsiung Chuen-Shii Chou
Department of Mechanical Engineering,National Pingtung University of Science and Technology Department of Mechanical Engineering, National Pingtung University of Science and Technology
国际会议
The 2nd Asian Materials Database Symposium(第二届亚洲材料数据库会议 AMDS 2010)
三亚
英文
177-185
2010-03-10（万方平台首次上网日期，不代表论文的发表时间）