Study on Latent Failure of ESD on Microelectric Device 2SC3356

摘要：

This paper deals with a latent failure study on the low-level electrostatic discharge (ESD) stresses on microelectric device. A series of low-level ESD stresses were imposed on microwave low noise transistor 2SC3356 using the human body model (HBM). It is shown that ESD stresses, even at a level below the failure threshold, can impact the device lifetime by creating latent defects, and the device impressed by lower ESD stressing was easier to occur latent failure.

关键词： ESD microelectric device latentfaiure

作者: Qi Shufeng Yang Jie

作者单位: Xian Research Institute of High Technology Xian, China Electrostatic and Electromagnetic Protection Research Institute Shijiazhuang, China

会议类型: 国际会议

会议名称: 2010 3rd International Conference on Environmental and Computer Science(2010年第三届环境与计算机科学国际会议 ICECS 2010)

会议地点: 昆明

会议语种:英文

页码: 167-169

在线出版日期: 2010-10-17（万方平台首次上网日期，不代表论文的发表时间）