Characterization of Silicon Carbide Films Prepared by Chemical Vapor Deposition
Silicon carbide prepared by chemical vapor deposition (CVD) is one of the important candidate materials for space mirror and high-power mirror such as laser mirror,because of its superior performances such as low density,high melting point and homogeneity. In this paper,the SiC coatings were deposited on the substrates of reaction bonded silicon carbide (RB-SiC) by CVD process. Then,the morphologies of the deposits were examined with scanning electron microscopy. The crystalline phase of the as-deposited films was confirmed with X-ray diffractometry. And the adhesion between the CVD film and the substrate was rated with scraping method. As a result,the morphologies of the deposits,i.e. Whiskers at 1050℃ or films at 1100℃ are different from that of the substrate. And the mean diameter of the deposits at 1100℃ is larger than that at 1050℃. Furthermore,the crystalline phase of the asdeposited film is determined as β-SiC and the adhesion is firm enough not to be peeled off with the scraping test.
Chemical vapor deposition Silicon carbide SEM XRD
Meng Fantao Du Shanyi Zhang Yumin
Center for Composite Materials,Harbin Institute of Technology,Harbin 150001,China School of Material Center for Composite Materials,Harbin Institute of Technology,Harbin 150001,China
国际会议
Frist Annual Meeting on Testing and Evaluation of Inorganic Materials(第一届全国无机材料测试与评价学术年会)
南昌
英文
78-81
2010-04-28（万方平台首次上网日期，不代表论文的发表时间）