Electrical Properties of ZnO Film Prepared by Thermal Oxidation Method

摘要：

Zn films were deposited on Al2O3 tube with Au electron and Pt wire by direct current magnetron sputtering,then ZnO films were synthesized by thermal oxidation in different temperature using resistance fumace. Surface topography of films was investigated by atomic force microscope. The resistance of ZnO films in air and other atmosphere was tested in a gas sensor test system. Results showed that the films surface morphology changed significantly during thermal oxidation growth. ZnO film synthesized at 1000℃ for 3 minutes has the smallest grain (32.6nm). the biggest roughness (60.9nm). Resistance of ZnO films declined with the increasing of heater power. The resistance of the ZnO layers depends dramatically on the sputtering time (direct proportion to the film thickness). The resistance of ZnO films in 10 minutes sputtering time is one order of magnitude higher than that in 80 minutes.

关键词： ZnO Film Magnetron Sputtering Thermal Oxidation Resistance

作者: Yanhui Liu Zhi Yan Yao Lu Xiying Zhou

作者单位: School of Materials Engineering,Shanghai University of Engineering Science,ShangHai 201620,China

会议类型: 国际会议

会议名称: Frist Annual Meeting on Testing and Evaluation of Inorganic Materials(第一届全国无机材料测试与评价学术年会)

会议地点: 南昌

会议语种:英文

页码: 190-193

在线出版日期: 2010-04-28（万方平台首次上网日期，不代表论文的发表时间）