Electrical Characteristics and Microstructures of Eu2O3-doped Bi4Ti3O12 Thin Films
Eu2O3-doped bismuth titanate (Bi1-xEuxTi3O12: BET) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique,and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BET films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with x=0.0 ,0.25,1.0 and 1.25,I-E characteristics exhibited negative differential resistance behaviors and their ferroelectric hysteresis loops were characterized by large leakage cunent,whereas for samples with x=0.5 and 0.75. I-E characteristics were simple ohmic behaviors and their ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr) and coercive field (Ec) of the BET Film with x=0.75 were above 30μC/cm2 and 85KV/cm ,respectively.
Ferroelectric Bismuth titanate Film Doping
X.A. Mei M. Chen K.L. Su A.H. Cai J. Liu W.K. An Y. Zhou M. Jia
School of Physics and Electronics,Hunan Institute af Science and Technology,Yueyang,414000,China
国际会议
Frist Annual Meeting on Testing and Evaluation of Inorganic Materials(第一届全国无机材料测试与评价学术年会)
南昌
英文
197-200
2010-04-28（万方平台首次上网日期，不代表论文的发表时间）