Ferroelectric Properties and Microstructures of Pr6O11-doped Bi4Ti3O12 Thin Films
Pr6O11-doped bismuth titanate (BixPryTi3O12 BPT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique,and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BPT films with well-developed rod-like grains consist of single phase of a bismuthlayered structure without preferred orientation. Pr doping into Bi4Ti3O12 (BIT) causes a large shift of the Curie temperature (TC) of paraelectricferroelectric phase transition of BIT from 675℃ to lower temperature and improvement in dielectric properties. The experimental results indicate that Pr doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT film with y=0.9 were 35 μC/cm2 and 80 kV/cm,respectively. After 3 x 1010 switching cycles,20％ degradation of Pr is observed in the film.
Ferroelectric Bismuth titanate Film Doping
M. Chen X.A. Mei K.L. Su A.H. Cai J. Liu W.K. An Y.Zhou
School of Physics and Electronics,Hunan Institute of Science and Technology,Yueyang,414000,China
国际会议
Frist Annual Meeting on Testing and Evaluation of Inorganic Materials(第一届全国无机材料测试与评价学术年会)
南昌
英文
211-214
2010-04-28（万方平台首次上网日期，不代表论文的发表时间）