Zinc Oxide Thin Films Grown by RF Magnetron Sputtering on Nanostructure Al Thin Layer/Glass and Glass Substrates
ZnO films with random and highly (002)-preferred orientation were deposited on nanostructured Al (n-Al) /glass and glass substrates at room temperature by RF magnetron sputtering method,respectively. According to I (002)/I (100) ~I annealed (002)/I annealed (100) -1.1 (on n-Al) and 21 annealed (002)/I (002) (on n-Al) - I annealed (002)/I(002) (on glass) -3.1,the rough n-Al surface is suitable for the growth of a-axis orientation,and the appearance of the (100) peak plays a major role in decreasing the c-axis orientation. The average optical transmission of the film on n-Al layer increased significantly afier annealing. At the same time,the growth mode and E 8 of ZnO films were discussed. On n-Al layer/glass substrate. it is not easy for the growth interface to form the smooth surface during the deposition process and Stranski Krstanov plays a primary role on the deposition of the films. Due to the significant increase of the interplanar spacing d (101),the band gaps for as-grown and annealed films grown on n-Al decreased,comparing with that of the film deposited on glass substrate.
ZnO Thin films Magnetron sputtering Nano Aluminum
T.Z. Liu S.W. Duo H. Zhang M.J. Ran
Jiangxi Key laboratory of Surface Engineering,Jiangxi Science and Technology Normal University,Nanchang 330013,China
国际会议
Frist Annual Meeting on Testing and Evaluation of Inorganic Materials(第一届全国无机材料测试与评价学术年会)
南昌
英文
398-403
2010-04-28（万方平台首次上网日期，不代表论文的发表时间）