Application of Multi-Lateral Double Diffused Field Ring in Ultrahigh-Voltage Device MOS Transistor Design

摘要：

A novel ultrahigh-voltage device with multi-lateral double diffused field ring in reduced surface field (RESURF) lateral double-diffused MOS (LDMOS) transistor in junction-isolated power IC technology is developed and successfully simulated. The multiple rings of P+ implant used linearly p-top mask design to form multi-lateral diffused field ring to cause many depletion regions. Due to charge balance effect, the multiple p-top rings makes the doping concentration of the N-drift region increased to cause the specific on-resistance reduced. The proposed multiple p-top rings RESURF LDMOS device is able to achieve a specific on-resistance of lower than 144.7 mΩcm2 while maintaining a breakdown voltage of over 800 volts.

关键词： RESURF LDMOS linear p-top rings on-resistance charge balance.

作者: Yang Shaoming Sheu Gene Guo Jiaming Tasi Jung Ruey

作者单位: Department of Computer Science and Information Engineering,Asia University 500,Lioufeng Rd.,Taichung,41354,China

会议类型: 国际会议

会议名称: 2011 10th International Conference on Electronic Measurement & Instruments(第十届电子测量与仪器国际会议 ICEMI2011)

会议地点: 成都

会议语种:英文

页码: 84-88

在线出版日期: 2011-08-16（万方平台首次上网日期，不代表论文的发表时间）