Analysis of Si3N4 passivation effect by self-consistent electro-thermal-mechanical simulation in AlGaN/GaN heterostructure HEMTs

摘要：

The effect of surface passivation on AlGaN/GaN higher electron mobility transistors (HEMT) has been investigated with electro-thermal-mechanical coupling. Electrical, mechanical and thermal properties of AlGaN/GaN HEMTs before and after passivation are analyzed. The drain current increases after passivation because surface passivation reduces the surface state density. Also, planar stress and elastic energy were decreased, as compare the devices with passivation and without passivation conditions. Also, the effect of different lattice heating (uniform heating, no lattice heating) has been studied in this experiment. This shows that the elastic energy in device with uniform heating is lower than that without lattice heating. In this investigation we found that uniform heating will provide elastic energy lower than critical value and with the use of Si3N4 the temperature distribution is very uniform which in turn reduces the stress in AlGaN/GaN HEMTs.

关键词： high electron mobility transistors passivation Si3N4

作者: Raunak Kumar Abijith Prakash Briliant Adhi Prabowo Anumeha Tsai Jungruey Gene Sheu Yang Shaoming Guo Yufeng

作者单位: Department of Computer Science and Information Engineering,Asia University500,Lioufeng Rd.,Taichung,41354,China

会议类型: 国际会议

会议名称: 2011 10th International Conference on Electronic Measurement & Instruments(第十届电子测量与仪器国际会议 ICEMI2011)

会议地点: 成都

会议语种:英文

页码: 235-238

在线出版日期: 2011-08-16（万方平台首次上网日期，不代表论文的发表时间）