Effects of SiO2 passivation on AlGaN/GaN HEMT by self-consistent electro-thermal-mechanical simulation

摘要：

We have carried out systematic experiments based on degradation mechanisms of GaN high electron mobility transistors (HEMT). The electro-thermo-mechanical properties of AlGaN/GaN are simulated for reliability testing under different temperature and bias conditions .The effect of surface passivation on undoped AlGaN/GaN HEMT is investigated using SiO2. This passivation layer can increase the electron density concentration. We have also performed the electro-thermal simulations to study the effect of passivation on selfheating, elastic energy and mechanical stress. Self heating phenomenon seems to be more uniform in case of passivated device. The SiO2 passivation layer reduces the elastic energy to about 20％ comparison with unpassivated device under the gate edge. The elastic energy near the gate edge is reduced which is the critical region for defect formation.

关键词： High electron mobility transistors passivation electro-thermo-mechanical SiO2.

作者: Abijith Prakash Raunak Kumar Briliant Adhi Prabowo Anumeha Manoj Kumar Yang Shaoming Gene Sheu Jung-Ruey Tsai

作者单位: Department of Computer Science and Information Engineering,Asia University 500,Lioufeng Rd.,Taichung 41354,China

会议类型: 国际会议

会议名称: 2011 10th International Conference on Electronic Measurement & Instruments(第十届电子测量与仪器国际会议 ICEMI2011)

会议地点: 成都

会议语种:英文

页码: 239-242

在线出版日期: 2011-08-16（万方平台首次上网日期，不代表论文的发表时间）