Effect of Ar/O2 gas ratio and annealing temperature on the structure and properties of ZnO film

摘要：

Zinc oxide (ZnO) film is deposited on Si (001) substrate by radio-frequency (RF) reactive magnetron sputtering method. Then the samples are annealed at different temperatures. The effects of the ratio of Ar/O2 and annealing temperature are investigated. Crystal structures of the films are characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results indicate that the ratio of Ar/O2 and the annealing temperature have great influence on the crystal orientation and the surface morphology. The crystalline orientation of ZnO thin film is in direct proportion to the Ar/O2 gas ratio. While less than 750℃, the crystal orientation of ZnO thin film increases with the annealing temperature increasing. As higher than 750℃, the crystalline orientation of ZnO thin film is inversely proportional to the annealing temperature.

关键词： piezoelectric film: ZnO film RF reactive magnetron sputtering the ratio of Ar/O2 annealing temperature c-axis orientation

作者: Chen Yinghui Gao Yang Xi Shiwei Zhao Xinghai Liu Juan

作者单位: Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621900,China;Depar Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621900,China

会议类型: 国际会议

会议名称: 2011 10th International Conference on Electronic Measurement & Instruments(第十届电子测量与仪器国际会议 ICEMI2011)

会议地点: 成都

会议语种:英文

页码: 1154-1157

在线出版日期: 2011-08-16（万方平台首次上网日期，不代表论文的发表时间）