Research and Comparison of Two Life Testing Methods
Both traditional life testing method and constant Electrical stress and Temperature Ramp stress Method (CETRM) are described. The two methods are compared taking the GaAs microwave power field effect transistor (FET) DX0011 life testing as an example. CETRM used less testing samples, took shorter testing time, and provided more reliability information than common life testing method.
Accelerated Life Testing Accelerated Degradation Testing Conventional method of accelerated life testing Constant Electrical stress and Temperature Ramp stress Method
Haochun Qi Changzhi Lu Xiaoling Zhang Xuesong Xie
School of Electronic Information and Control Engineering Beijing University of Technology Beijing 100024, China
国际会议
贵阳
英文
1040-1044
2011-06-12(万方平台首次上网日期,不代表论文的发表时间)