The Experimental Study on Polycrystalline Silicon Thin Film prepared with SiH4 by ECR-PECVD
Polycrystalline silicon (Poly-Si) thin film is widely used in Large-Scale Integration (LSI) and semiconductor discrete devices because of its excellent photoelectric characteristics and low-cost of preparation. There is a extension that amorphous silicon thin film solar cells would be replaced be by polycrystalline silicon thin film solar cells which is a new generation of non-pollution solar cells with high and steady transition efficiency,low preparation cost. PECVD (plasma enhance chemical vapor deposition) and ECR-PECVD (electron cyclotron resonance-PECVD) are effective ways to preparation for high rate,large-area deposition of polycrystalline silicon thin film. The glow discharge can be maintained at lower temperature by ECR-PECVD system. In present study,SiH4 was chosen as precursor gas,polycrystalline silicon thin film was prepared on glass and mono-crystalline silicon substrates respectively based on ECR-PECVD system,and experimental study was carried out The experimental results showed that the high-grade Poly-Si thin film was prepared by ECR-PECVD with low temperature of substrate. A deep research is needed to increase the grain size and simplify preparation process.
polycrystalline silicon thin film ECR-PECVD thin film preparation experimental study
WANG Xiao-dong WANG Yang LEI Hong-jian
Vacuum and Fluid Research Centre,School of Mechanical Engineering and Automation,Northeastern University,Shenyang 110819,China
国际会议
沈阳
英文
199-201
2011-05-22（万方平台首次上网日期，不代表论文的发表时间）