A High -Order Temperature Curvature Compensated CMOS Bandgap Reference

摘要：

This paper presents a second-order corrected Bandgap reference (BGR) based on TSMC 0.35μm 2P3M CMOS process. This novel proposed CMOS bandgap reference take advantage of the high temperature coefficient (TC) of some resistors, to compensate the high-order temperature curvature of the base-emitter voltage (VBe). This circuit can achieve temperature coefficient of 1.5ppm/ ℃ for temperature from 40 to 120℃ at 5 V power supply. The proposed circuit will find application in the high precision analog and digital circuits.

关键词： Bandgap reference temperature coefficient high-order temperature compensation

作者: Peng zhenyu Lv Changzhi She Shuojie

作者单位: Reliability Physics Lab Beijing University of Technology Beijing, China

会议类型: 国际会议

会议名称: 2010 4th International Conference on Intelligent Information Techonlogy Application(第四届智能信息技术应用国际学术研讨会 IITA 2010)

会议地点: 秦皇岛

会议语种:英文

页码: 166-169

在线出版日期: 2010-11-05（万方平台首次上网日期，不代表论文的发表时间）