Adsorption Efficiency of Cesium during the Activation Process for NEA GaAs Photocathode
Photocathode materials with the lower surface doping density need the longer time to arise photocurrent during the first cesium activation process when the systems vacuum level is not high enough, and which can be found from the photocurrent curves arising during the activation process for Negative-electronaffinity (NEA) GaAs photocathodes. At the same time, with the enhancement of systems vacuum level, these differences in time will become not obvious. It is indicated that the adsorption efficiency of cesium on the cathode surface has the direct relationships with the surface doping density and the systems vacuum level. In order to analyze these relationships quantitively, in this paper, a mathematical model of the adsorption efficiency of cesium on the cathode surface was established according to the experimental data. The simulation results by the model are in good agreement with the experimental phenomenon. This study has very important value and significance for the farther investigations on the structure design and preparation techniques for varied doping GaAs photocathode materials.
Photocathode Adsorption efficiency Vacuum level Doping density
Jun Niu Ge Zhang Yijun Zhang Benkang Chang
Department of Electron and Electric Nanyang Institute of Technology Nanyane,Henan Province, 473004, School of Electronic Engineering and Optoelectronic Technology Nanjing University of Science and Tec
国际会议
2010 International Conference on Smeiconductor Laser and Photonics(2010年半导体激光与光子学国际会议 ICSLP 2010)
成都
英文
21-24
2010-10-25（万方平台首次上网日期，不代表论文的发表时间）