Study on Doped Dlc Films Deposited by Pulse Arc Technology
The bonds of metal and carbon dont form in metal-doped DLC films which be deposited by pulse arc facility for the condition of low temperature and alternate deposition. The hardness and internal stress decreases as the doped content increase, the good luck is that the stress decreases more dramatically. And the friction coefficient increase as the doped content increase. When the Si has doped, Si-C bonds has been formed, and the hardness of films keep constant as the Si content under 6.7％, so the properties of mechanic have been improved by doping Si. The Si doped target be used in film deposition process, atoms of Si and C were deposited at one time, so that the Si-C bond formed.
diamond like carbon doped pulse arc deposition mechanics properties
D.C.Zhao N.Ren Z.J.Ma G.J.Xiao S.H.Wu
Science and Technology on Surface Engineering Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, China
国际会议
北京
英文
292-294
2010-10-25（万方平台首次上网日期，不代表论文的发表时间）