Optimizing Techniques for Charge Injection Effect of Pixels in CMOS Image Sensor
Analysis on the charge injection effect of the pixels in CMOS image sensor is discussed and the optimizing techniques for the effect is proposed in this paper. The pixel consists of a Pinned-Diode and several MOS switches with large size, which causes severe charge injection during normal pixel operations. Analysis on the dynamic range of the Pinned-Diode (PD), node reset, exposure signal-reading aiming at charge injection effect is implemented, based on which, optimizing techniques for the effect by employing appropriate time sequence and suitable voltages/controlling signals are proposed. The dynamic range of PD is improved by 26％ and the charge injection effect on FD (Floating-Diffusion) node is suppressed by 80％.
CMOS image sensor charge injectione APS pixel
Ran Zheng Tingcun Wei Deyuan Gao Feng Li Huiming Zeng
Engineering Research Center of Embedded System Integration Ministry of Education Xian China
国际会议
太原
英文
258-261
2010-10-22（万方平台首次上网日期，不代表论文的发表时间）