The effect of stress(strain) on NMOSFET properties

摘要：

In this paper, it is first time to introduce a new effect-Meso-transconductance Effect, applying a stress(strain) on the gate plane of NMOSFET along the axis direction. The stress causes a strain and the strain, in turn, affects the current-voltage response. The results show that the strain can make the changes of ID-VDS characteristic ID-VGS characteristic Gtr-VGS characteristic. The results indicate that the Meso-transconductance Effect has potential applications in Microelectronic devices that are small in size and demand low power consumption.

关键词： component meso-transconductance effect stress microelectronic devices

作者: Xiang Hong Li ping Xu Ting dun Wen

作者单位: Department of Physics, North University of China, Taiyuan, Shanxi 030051, China

会议类型: 国际会议

会议名称: The 2010 International Conference on Computer Application and System Modeling(2010计算机应用与系统建模国际会议 ICCASM 2010)

会议地点: 太原

会议语种:英文

页码: 329-331

在线出版日期: 2010-10-22（万方平台首次上网日期，不代表论文的发表时间）