Triaxial Accelerometer Design Based on MesoPiezoresistive Effect

摘要：

With the theory of meso-piezoresistive effect, we design a high sensitivity piezoresistive triaxial accelerometer. A three-mass dual-beam geometric micro-structure cavity can be designed by using GaAs/AlAs/InGaAs RTS film as sensitive elemenLAfter theoretical analysis and calculation of the sensitivity of this accelerometer and having compared with conventional silicon micro-accelerometer,we know the piezoresistive sensitivity of the RTS film that possesses the meso-piezoresistive effect is higher than the ordinary bulk silicon material. Building a reasonable bridge circuit can enhance the output voltage signal,The design of the same geometric size double cantilever in three axes may achieve the equal precision measurement in any direction.

关键词： meso-piezoresistive effect GaAs / AlAs /InGaAs

作者: Huang Kun Wen Tingdun

作者单位: Department of Physics North University of China Taiyuan, China

会议类型: 国际会议

会议名称: The 2010 International Conference on Computer Application and System Modeling(2010计算机应用与系统建模国际会议 ICCASM 2010)

会议地点: 太原

会议语种:英文

页码: 332-334

在线出版日期: 2010-10-22（万方平台首次上网日期，不代表论文的发表时间）