Practice on Layout-Level Radiation Hardened Technologies for I/O Cells

摘要：

Radiation hardened technologies are important to improve the anti-radiation performance of ICs. In this paper, several I/O cells in 0.1 8μm CMOS process are designed and radiation hardening technologies through layout design are researched. The function, timing and the effect of the ESD protection scheme for the I/O cells are analyzed by HSPICE simulation. The way of layout-level radiation hardening consists of single event effect and total ionizing dose effect. TCAD simulation is used to analyze the validity of the technologies adopted in the paper, and the experimental results indicate that the single event latch-up threshold increases effectively, and the anti-radiation performance is improved.

关键词： I/O cells Single Event Effect Total Ionizing Dose Single Event Latch-up Radiation Hardened ESD TCAD

作者: Wang Jing Xing Zuocheng Huang Ping Wang Tianran Fu Guitao

作者单位: School of Computer,National University of Defense Technology,Changsha,410073,China

会议类型: 国际会议

会议名称: 2010 International Conference on Information,Networking and Automation(2010 IEEE信息网络与自动化国际会议 ICINA 2010)

会议地点: 昆明

会议语种:英文

页码: 365-369

在线出版日期: 2010-10-17（万方平台首次上网日期，不代表论文的发表时间）