High Power Frequency Multipliers to 330 GHz

摘要：

The development of GaAs Schottky diodes using substrate transfer techniques is presented. It is argued that these devices are limited in power handling by the choice of substrate material. To mitigate against these thermal effects, the migration to CVD diamond substrates is a logical progression. A significant programme aimed at developing this technology is presented.

作者: Byron Alderman Manju Henry Alain Maestrini Jesues Grajal Ralph Zimmermann Hosh Sanghera Hui Wang Paul Wilkinson David Matheson

作者单位: Rutherford Appleton Laboratory, Chilton, Oxfordshire, 0X11 OQX, UK Observatoire de Paris, LERMA, 75014 Paris, France Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain Radiometer Physics GmbH, 53340 Meckenheim, Germany

会议类型: 国际会议

会议名称: The 3rd China-Europe Workshop on Millimetre Waves and Terahertz Technologies(第三届中欧毫米波与太赫兹技术研讨会)

会议地点: 北京

会议语种:英文

页码: 51-53

在线出版日期: 2010-09-23（万方平台首次上网日期，不代表论文的发表时间）