Reactive Twin-magnetron Sputtering of Ti1-xNbxO2 Transparent Conducting Oxide Films
We obtained Ti1-xNbxO2(TNO) by doping Nb to TiO2. TNO transparent conducting film was fabricated by reactive midfrequency (MF) twinmagnetron sputtering method with assistance of a multicell anode layer ion sources, and the sputtering process was controlled by plasma emission monitor (PEM). The films were characterized by Xray diffraction (XRD), atomic force morphology (AFM), spectroscopic ellipsometry, spectrophotometer and xray photoelectron spectroscopy (XPS). The behaviors of the carrier concentration and mobility of TNO thin films were investigated by means of the Hall technique.The results demonstrate that the reactive process can be controlled stably during the metaloxide transition with monitor of PEM, and the disadvantages of titanium target poison and anode disappear were also successfully overcome. Polycrystalline TNO thin films with 0.03 ≤x≤0. 06 show a resistivity (ρ) of lower than 2. 0× 103 Ωcm. And internal optical transmittance higher than 90％ at 600 nm. The firstprinciple band calculations demonstrate that Ti2ρ, Nb3d and Ti3d states are strongly hybridized with each other to form dnature conduction band, substituted Nb atoms are ionized and release electrons into the hybridized conduction band without forming midgap state.
Transparent conducting oxides TCO thin film Ti1-xNbxO2 TNO reactive sputtering twinmagnetron firstprinciple calculation
Wang Yong lin Yan Yue Wu Jianhua Chen Xiangbao
Beijing Institute of Aeronautical Materials, Beijing 100095, China
国际会议
2010 Asia-Pacific International Symposium on Aerospace Technology(2010 亚太航空航天技术研讨会 APISAT 2010)
西安
英文
950-953
2010-09-01（万方平台首次上网日期，不代表论文的发表时间）