Thermal Analysis of Deep Sub-micron PD SOI MOSFET with Asymmetric Source and Drain

摘要：

Focusing on the influence of self-heating effect on electrical properties of the SOI device, thermal analysis of the partially depleted (PD) SOI MOSFET with asymmetric source and drain is performed, and temperature distribution and electrostatic potential distribution of the device are simulated with TCAD tools. The results show that: the heat source of the device is the regions with the highest electrostatic potential; the lattice temperature of the device rises with the shrinking of channel length and silicon film thickness, and the former has more influence. PD SOI MOSFET with asymmetric source and drain is better in reducing self-heating effect than the other SOI devices.

关键词： asymmetric source and dram PD SOI i self-heating effect thermal analysis non-isothermal energy transport

作者: Tang Wei Liu You-bao Wu Long-sheng

作者单位: Xian Microelectronics Technology Institute Xian, China

会议类型: 国际会议

会议名称: 2010 3rd IEEE International Conference on Computer Science and Information Technology(第三届IEEE计算机科学与信息技术国际会议 ICCSIT 2010)

会议地点: 成都

会议语种:英文

页码: 322-325

在线出版日期: 2010-07-07（万方平台首次上网日期，不代表论文的发表时间）