Design of X-band Low-Noise Amplifier for Optimum matching between Noise and Power

摘要：

High Electron Mobility Transistors (HEMT) plays a crucial role in microwave low noise receivers. Low noise HEMTs are used extensively in the ultra low noise amplifier (LNAs). Design the LNA is difficult for the radio astronomical observations, especially the realization of the simultaneous about the noise matching and the power matching, as well as the full band unconditional stability. With the Agilent Advanced Design System (ADS) simulation tools, the Xband three-stage LNA using NEC-NE3210S0I HEMTs has been designed: Noise Figure<0.6dB; power Gain>30dB at X-band (7.8~9.4GHz), full band unconditional stability.

关键词： wide-band LNA HEMT Noise matching Power matching

作者: WANG Xiao-mei Sun Zhengwen Chen Yong Wang Sixiu

作者单位: Urumqi Observatory, National Astronomical Observatories, Chinese Academy of Sciences, Urumqi,China,8 Urumqi Observatory, National Astronomical Observatories, Chinese Academy of Sciences, Urumqi,China,8

会议类型: 国际会议

会议名称: 2010 2nd International Conference on Education Technology and Computer(第二届IEEE教育技术与计算机国际会议 ICETC 2010)

会议地点: 上海

会议语种:英文

页码: 184-188

在线出版日期: 2010-06-22（万方平台首次上网日期，不代表论文的发表时间）