A High-Efficiency Cross-Coupled Charge Pump for Flash Memories

摘要：

This paper presents a new cross-coupled charge pump structure which generates 2Vdd output and applies to flash memory. Compared with conventional structures, the novel scheme has lower ripple voltage, and higher efficiency. These advantages were achieved by employing the methods of reducing power loss effectively. The proposed charge pump was fabricated with TSMC 0.18μm CMOS process. By the simulation of HSPICE, it shows that the new scheme could operate at a supply voltage as low as 0.9V with the maximum efficiency of 91.82％.

关键词： charge pump power Loss efficiency flash memory

作者: YI-RAN WANG ZONG-GUANG YU

作者单位: College of Information Engineering,Jiangnan University,Wuxi, Jiangsu,214122, P.R.China The 58th Institute,China Electronics Technology Group Corporation,Wuxi, Jiangsu, 214061, P.R.China

会议类型: 国际会议

会议名称: The 2nd IEEE International Conference on Advanced Computer Control(第二届先进计算机控制国际会议 ICACC 2010)

会议地点: 沈阳

会议语种:英文

页码: 130-133

在线出版日期: 2010-03-27（万方平台首次上网日期，不代表论文的发表时间）