Investigation of Short Channel Power Trench MOSFETs with Body Profile Optimization

摘要：

Power Trench MOSFET (U-MOSFET) with short channel is investigated in this paper. The total specific onresistance (Rds.on) of U-MOSFET can be reduced by shortening the channel length (Lch), we compare three means of shorting channel length by optimizing the body doping profile. Electronic parameters of these structures have been obtained by process and device simulation. The results show that the conventional short channel structure is not appropriate at low gate drive conditions, the retrograde body profile and the uniform body profile structures can both reduce the Rds.on at high and low gate drive conditions, while the uniform body profile structure will not increase the threshold voltage.

关键词： Power Trench MOSFET (U-MOSFET) specific on-resistance (Ads,anJ channel doping profile short channel

作者: Li Chen Quanyuan Feng

作者单位: Institute of Microelectronics, Southwest Jiaotong University, Chengdu, China

会议类型: 国际会议

会议名称: 2011 International Conference on Information and Industrial Electronics(2011年信息与工业电子国际会议 ICIIE 2011)

会议地点: 成都

会议语种:英文

页码: 207-210

在线出版日期: 2011-01-14（万方平台首次上网日期，不代表论文的发表时间）