Optimum Design of A Step-Oxide Trench GatePower MOSFET with Low On-Resistance

摘要：

A high voltage trench gate power MOSFET with the step-oxide gate trench is designed. The power MOSFET is characterized by the step-oxide in the deep trench. By extending the trench to the level above substrate, the drift region resistance is partially replaced by the resistance of accumulation layer and the therefore total on-resistance of power MOSFET can be reduced. Owing to the extended part of step-oxide gate, the electric field is modulated and high breakdown voltage)(BV) can be supported. And the high drift region doping concentrationN_d) contributes to a low specific on-resistance(Ron). A few groups of key structure parameters are investigated to make a tradeoff between breakdown voltage and specific on-resistance. An optimum breakdown voltage of 83V with 36.6mI2?mm2 specific onresistance is obtained.

关键词： trench power MOSFET step-oxide optimum design breakdown vollage(BV) specific on-resistance(Ran)

作者: Chi Liu Quanyuan Feng

作者单位: Institute of Microelectronics Southwest Jiaotong University, SWJTU Chengdu, China

会议类型: 国际会议

会议名称: 2011 International Conference on Information and Industrial Electronics(2011年信息与工业电子国际会议 ICIIE 2011)

会议地点: 成都

会议语种:英文

页码: 549-552

在线出版日期: 2011-01-14（万方平台首次上网日期，不代表论文的发表时间）