Field Effect Transistor Fabricated On Semiconducting Diamond Substrate for Application to Long Distance Wireless Power Transmission
In this paper, basic electrical properties of semiconducting diamond were investigated in order to check its capability for application to electron device. Especially, a field effect transistor was fabricated on diamond substrate, and its electrical properties were investigated. We could observe a clear current modulation characteristic from the field effect transistor. Maximum breakdown voltage was - 150 V. Above result indicates that the diamond field effect transistor is appropriate for high power device.
Diamond AMP FET
Young Yun Young-Bae Park Jang-Hyeon Jeong Eui-Hoon Jang Jeong-Gab Ju
Department of Radio Sciences and Engineering Korea Maritime University Busan, Korea
国际会议
2011 International Conference on Information and Industrial Electronics(2011年信息与工业电子国际会议 ICIIE 2011)
成都
英文
637-639
2011-01-14（万方平台首次上网日期，不代表论文的发表时间）