Work Around Moores Law: Current and Next Generation Technologies

摘要：

Interconnect dimensions and CMOS transistor feature size approach their physical limits, therefore scaling will no longer play an important role in performance improvement. So, instead of trying to improve the performance of traditional CMOS circuits, integration of multiple technologies and different components in a heterogeneous system that is high performance will be introduced moore than more and CMOS replacemenfbeyond CMOS will be explored. This paper focuses on Technology level trends where it presents More Moore:New Architectures (SOI, FinFET, Twin-Well),More Moore :New Materials (High-K, Metal Gate, Strained-Si) ,More than Moore:New Interconnects Schemes (3D, NoC, Optical, Wireless), and Beyond CMOS :New Devices (Molecular Computer, Biological computer, Quantum Computer).

关键词： Moore Moore than More Beyond CMOS TSV 3D CNT FinFET

作者: Khaled Salah Mohamed

作者单位: Mentor Graphics Cairo, Egypt

会议类型: 国际会议

会议名称: 2010 International Conference on Nano Science and Technology(2010年IEEE纳米科技国际会议 ICNST2010)

会议地点: 成都

会议语种:英文

页码: 9-12

在线出版日期: 2010-12-17（万方平台首次上网日期，不代表论文的发表时间）