Low temperature growth of patterned ZnO nanowires and their field emission characteristics

摘要：

Uniformly distributed and quasi-perpendicular patterned ZnO nanowires were synthesized on Ag electrodes coated Si substrate by thermal evaporation. Field emission (FE) measurements show that its turn-on field is 3.65V/μm at current density of 10μA/cm2 and its the threshold field at current density of lmA/cm2 is about 6.56 V/μm at an emitter-anode gap of 400μm. and the fluctuation of FE current density is smaller than 10％ for 3.5h at electric field of 6V/μm. The low turn-on field and good stability indicates that it offers advantages as field emitter for much potential application.

关键词： ZnO nanowires Patterned growth Field emission

作者: Zhang Yong-ai Lin Jin-yang Wu Chao-xing Guo Tai-Liang

作者单位: School of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, P. R. China

会议类型: 国际会议

会议名称: 2010 International Conference on Nano Science and Technology(2010年IEEE纳米科技国际会议 ICNST2010)

会议地点: 成都

会议语种:英文

页码: 77-79

在线出版日期: 2010-12-17（万方平台首次上网日期，不代表论文的发表时间）