Studies on the preparation and characterization of ferroelectric PLZT film capacitors

摘要：

(Pb(0.92)La(0.08))(Zr0.65Ti(0.35))O3(PLZT) thin films were fabricated on indium-doped tin oxide (ITO)-coated glass substrates to create transparent capacitor by the sol-gel method following annealing process. X-ray diffraction analysis shows that the PLZT thin films are polycrystalline with a single perovskite phase at 650C. The ferroelectric, electrical and optical properties of these films were investigated in detail as a function of annealing temperature. Measurements with the PLZT films annealed at 650℃ yielded the following: relative permittivity=775 and dielectric loss (tanδ)=0.054, leakage current of 7.1×10-9A, and remanent polarization of 38 μC/cm2 and the coercive electric field of 55 kV/cm and transparency of 88％. The pure perovskite films exhibit better properties than those films which have some fraction of pyrochlore phase.

关键词： PLZT film Sol-gel XRD Optical properties Electrical properties

作者: Li Liu Hua Wang JiWen Xu MingFang Ren Ling Yang

作者单位: Guangxi Key Laboratory of Information Materials,Guilin University of Electronic technology,Guilin 54 Guangxi Key Laboratory of Information Materials,Guilin University of Electronic technology, Guilin 5

会议类型: 国际会议

会议名称: 2010 International Conference on Nano Science and Technology(2010年IEEE纳米科技国际会议 ICNST2010)

会议地点: 成都

会议语种:英文

页码: 196-198

在线出版日期: 2010-12-17（万方平台首次上网日期，不代表论文的发表时间）