Electronic Transport Properties of SiC Nanotube with Antisite Defect

摘要：

The electronic transport properties of an (8, 0) SiC nanotube (SiCNT) with antisite defect are investigated with the method combined non-equilibrium Greens function with density functional theory, in which the defect is formed with a carbon atom being substituted by a silicon atom. In transmission spectrum of the nanotube, a transmission valley about 1.68 eV near the Fermi energy is discovered, which indicates that the nanotube is a wide band-gap semiconductor. In its current-voltage characteristic, turn-on voltages of ±1.0 V are found under positive and negative bias. This originates from more orbital participating in its electronic transport properties caused by the bias. These results are meaningful to investigations on working mechanisms of SiCNT electronic devices.

关键词： SiCNT antisite defect electronic transport properties non-equilibrium Greens function

作者: Song Jiuxu Liu Hongxia

作者单位: School of Electronic Engineering Xian Shiyou University Xian, China Xian Institute of Microelectronic Technology Xian, China

会议类型: 国际会议

会议名称: 2010 International Conference on Nano Science and Technology(2010年IEEE纳米科技国际会议 ICNST2010)

会议地点: 成都

会议语种:英文

页码: 211-213

在线出版日期: 2010-12-17（万方平台首次上网日期，不代表论文的发表时间）