Optical Properties of Nano-CuInSi thin Films Prepared by Multilayer Synthesized Method
Thin Nano-CuInSi films have been prepared by multilayer synthesized method using magnetron sputtering technology, and followed by annealing in N2 atmosphere at different temperatures. The structures of CuInSi films were detected by X-ray diffraction(XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, the peak of main crystal phase is at 20=42.450°; the morphology of the film surface was studied by SEM. The SEM images show that the crystalline of the film prepared by multilayer synthesized method was granulated. The transmittance (T) spectra of the films were measured by Shimadzu UV-2450 double beam spectrophotometer. The calculated absorption coefficient is larger than 105 cm-1 when the wavelength is shorter than 750 nm. The band gap has been estimated from the optical absorption studies and found to be about 1.47 eV, but changes with purity of CuInSi. CuInSi thin film is a potential absorber layer material applied in solar cells and photoelectric automatic control.
magnetron sputtering CuInSi film annealing temperature multilayer synthesized
Jiansheng Xie Ping Luan Jinhua Li
School of Mathematics and Physics, Changzhou University, Changzhou, 213164 Jiangsu, China School of Mathematics and Physics,Changzhou University, Changzhou, 213164 Jiangsu, China
国际会议
2010 6th International Conference on MENS NANO,and Smart System(2010年微机电纳米、智能系统国际会议 ICMENS 2010)
长沙
英文
71-74
2010-12-14（万方平台首次上网日期，不代表论文的发表时间）