A Novel Design of InN Based Quantum-Dot Laser Operating at 1.55 μm
Quantum dot (QD) laser has recently brought the breakthrough in optoelectronics and now it has been the most research effort subject matter around the world. The InN based quantum dot laser technology has been reported which emits around 1.55 fim and this wavelength is the most promising candidates for long distance communication. Details of design and theoretical analysis of applied transition energy on level occupancies, dependence of threshold current density on normalized surface density of QDs and modal gain, and differential quantum efficiency are presented considering single layer of quantum dots. The transparency threshold has been obtained at 0.8016 eV and at zero normalized applied transition energy. The external differential efficiency of 65％ and a modal gain of 12.5 cm1 are obtained for the proposed structure. The results indicate that the proposed inN-based quantum dot laser is the promising one for the fabrication of future high performance laser.
differential quantum efficiency InN modal gain normalized surface density quantum dot
Md. Mottaleb Hossain Md. Multan Biswas Md. Abdullah-Al-Humayun Mohammad Ashraf Hossain Sadi
Department of Electrical & Electronic Engineering Stamford University Bangladesh Dhaka, Bangladesh Department of Electrical & Electronic Engineering Rajhshahi University of Engineering & Technology R
国际会议
2010 6th International Conference on MENS NANO,and Smart System(2010年微机电纳米、智能系统国际会议 ICMENS 2010)
长沙
英文
94-98
2010-12-14（万方平台首次上网日期，不代表论文的发表时间）