Electronic Transport Properties of Single-walled Zigzag Silicon Carbide Nanotubes with Antisite Defects

摘要：

The electronic transport properties are the basis for investigations on silicon carbide nanotube (SiCNT), which are suitable to develop novel nanometer electronic devices. The electronic transport properties of single-walled (8, 0) SiCNTs with antisite defects are investigated with the method combined non-equilibrium Greens function with density functional theory. Results show that the similarity on electronic transport properties of the nanotube with different defects is high. Under a bias value greater than 1.0 V, a nearly exponential relationship between the bias and the current is achieved, which originates from more orbital participating in its transport properties caused by the increase of the bias.

关键词： antisite defects SiCNT electronic transport properties non-equilibrium Greens function

作者: Song Jiuxu Liu Hongxia

作者单位: School of Electronic Engineering Xian Shiyou University Xian, China Xian Institute of Microelectronic Technology Xian, China

会议类型: 国际会议

会议名称: 2010 6th International Conference on MENS NANO,and Smart System(2010年微机电纳米、智能系统国际会议 ICMENS 2010)

会议地点: 长沙

会议语种:英文

页码: 241-243

在线出版日期: 2010-12-14（万方平台首次上网日期，不代表论文的发表时间）