A Memory Fault Simulator for Radiation-Induced Effects in SRAMs

摘要：

This paper introduces a simulator that allows analyzing the radiation induced errors on memory devices. The simulator takes all the radiation effects on SRAM into account and can be easily tuned on the base of data gained during radiation experiments and/or presented in literature. We also present a case study application in which the proposed simulator is used to validate a low-cost hardware platform for soft error detection in avionic environment by the mean of atmospheric balloons in the context of HAMLET project.

作者: P. Rech A. Bosio P. Girard S. Pravossoudovitch A. Virazel L. Dilillo

作者单位: LIRMM, University Montpellier 2, Montpellier, France

会议类型: 国际会议

会议名称: 2010 19th IEEE Asian Test Symposium(第19届IEEE亚洲测试技术学术会议 ATS 2010)

会议地点: 上海

会议语种:英文

页码: 100-105

在线出版日期: 2010-12-01（万方平台首次上网日期，不代表论文的发表时间）