会议专题

THEORETICAL AND NUMERICAL ANALYSIS OF EUV LITHOGRAPHY MASK BLANK FABRICATION

Extreme Ultraviolet Lithography (EUVL) is the leading candidate for Next-Generation Lithography in the sub-45 nm regime. One of the key problems to be solved before EUVL can be commercialized is the control of the image placements during the EUVL mask fabrication. This paper focuses on the study and analysis of the EUVL mask blank fabrication process. The relations between the distortions of the EUVL mask and the parameters of the stressed thin film layers have been revealed. Theoretical derivation and numerical analysis in this research provide a solid technical support for the EUVL mask blank fabrication process.

EUV lithography Mask blank fabrication Finite element method

LIANG ZHENG

Harbin Institute of Technology Shenzhen Graduate School, Shenzhen, China 518055

国际会议

The International Conference on Advanced Technology of Design and Manufacture 2010(2010先进设计与制造技术国际研讨会)

北京

英文

16-19

2010-11-23(万方平台首次上网日期,不代表论文的发表时间)