INVESTIGATION OF IMAGE PLACEMENT ERRORS IN EXTREME ULTRAVIOLET LITHOGRAPHY MASKS

摘要：

Extreme Ultraviolet Lithography (EUVL) is one of the principal carriers for the IC production at sub-45 nm technology nodes. One of the key problems to be solved before EUVL can be commercialized is the control of the image placement errors during the EUVL mask fabrication. In this paper, EUVL mask fabrication process has been analyzed and the image placement errors induced during the EUVL mask fabrication process were investigated. With the implementation of an electrostatic chuck at both e-beam tool and exposure tool chucking, the image placement errors due to the mask fabrication can be well controlled.

关键词： EUVL mask pattern transfer image placement error electrostatic chuck finite element analysis

作者: LIANG ZHENG

作者单位: Harbin Institute of Technology Shenzhen Graduate School, Shenzhen, China 518055

会议类型: 国际会议

会议名称: The International Conference on Advanced Technology of Design and Manufacture 2010(2010先进设计与制造技术国际研讨会)

会议地点: 北京

会议语种:英文

页码: 293-296

在线出版日期: 2010-11-23（万方平台首次上网日期，不代表论文的发表时间）