Wafer-level magnetotransport measurement of advanced transistors-making a powerful technique even more powerful

摘要：

For transistor research and development, one of the important figures of merit is the carrier mobility. The measurement of mobility is cumbersome in large devices, and nearly impossible in nano scale devices. Very often, effective mobility (μcff) is extracted from the I-V curve instead. There are many pitfalls in equating μcff to mobility ((a), including charge-trapping and series resistance effects. The error can be quite large. This is a urgent issue for advanced CMOS technology.

作者: K. P. Cheung J. P. Campbell L. Yu

作者单位: National Institute of Standards & Technology, Gaithersburg, MD USA GE Global Research, Niskayuna, NY USA

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 17-20

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）