Integration of metallic source/drain (MSD) contacts in nanoscaled CMOS technology
An overview of metallic source/drain (MSD) contacts in nanoscaled MOSFET technology is provided in this paper. MSD contacts offer several benefits for nanoscaled CMOS, i.e., extremely low S/D parasitic resistance, abruptly sharp junctions between S/D and channel and preferably low temperature processing. In order to achieve high performance MSD MOSFETs, many design parameters such as Schottky barrier height (SBH), S/D to gate underlap, top Si layer thickness, oxide thickness and so on should be optimized. Recently, a lot of efforts have been invested in MSD MOSFETs based on Pt- and Ni-silicide implementation and several promising results have been reported in literature. The experimental work as well as the results of Monte Carlo simulations by this research team and by other research teams is discussed in this paper. It will be shown that the present results place MSD MOSFETs as a competitive candidate for future generations of CMOS technology.
Mikael Ostling Jun Luo Valur Gudmundsson Per-Erik Hellstrom B. Gunnar Malm
School of Information and Communication Technology, Royal Institute of Technology (KTH), Electrum 229, SE-164 40 Kista, Sweden
国际会议
上海
英文
41-45
2010-11-01（万方平台首次上网日期，不代表论文的发表时间）