Outlook for 15nm CMOS Research Technologies

摘要：

So far the most aggressive manufacturing forecast for 22nm technology node is in late 2011, and there still remains many arguments for its next generation, 15nm manufacturing technologies. The major obstacles in front of the manufacturing are (1) high cost fine patterning technology, (2) tradeoff of SRAM cell size and performance, (3) increasing variability, (4) short channel effect control, etc. In this paper our efforts tried to access 15nm CMOS device for preliminary research study will be reviewed, including (1) Nano-injection lithography, (2) operation of record small SRAM cell, (3) discrete dopant simulation, and (4) device design for extremely scaled device.

作者: Fu-Liang Yang Hou-Yu Chen Chien-Chao Huang

作者单位: National Nano Device Laboratories CNDIA Hsinchu Science Park. Taiwan

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 62-65

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）