Cluster Carbon Ion Implantation for NMOS Device Fabrication Improvements

摘要：

To achieve an ultra-shallow junction formation with low resistivity, Cluster Carbon (CC) co-implantation for NMOS source drain and source drain extension condition are investigated. It is found that using CC co-implantation, Phosphorus (P) TED was suppressed and the lower junction depth Xj is achieved. The sheet resistivity Rs is increased with the increment of the Carbon dose, but the RsxXj product has a minimum condition is confirmed. From the experimental data, it is shown that the Cluster Carbon ion implantation (CC1I) condition is important to suppress P TED effectively.

作者: M.Tanjyo Y.Hashino Y.Nakashima T.Igo M.Hashimoto N.Tokoro N. Nagai H.Onoda T.Nagayama N.Hamamoto S.Umisedo Y.Koga H.Une N.Maehara Y.Kawamura

作者单位: Nissin Ion Equipment Co., Ltd, 575 Kuze-Tonoshiro-cho, Minami-ku, Kyoto, 601-8205 Japan Nissin Ion Equipment Co.,Ltd, 575 Kuze-Tonoshiro-cho, Minami-ku, Kyoto, 601-8205 Japan

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 74-77

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）