DIBL performance of 60 MeV proton-irradiated SOI MuGFETs

摘要：

The impact of a 60 MeV proton irradiation on the drain induced barrier lowering is investigated for tri-gate FinFETs processed with and without the implementation of different biaxial or uniaxial strain engineering techniques. A contrasting behavior is observed for n- and pFinFETs, which may be associated with the radiation-induced charges in the buried oxide and the influence of the back channel on the front transistor performance.

作者: P. G. D. Agopian J. A. Martino

作者单位: LSI/PSI/USP, University of Sao Paulo, Brazil Centro Universitario da FEI, S.B. Campo, Brazil Imec, K LSI/PSI/USP, University of Sao Paulo, Brazil Imec, Kapeldreef 75, B-3001 Leuven, Belgium

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 105-107

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）