Study on The Removal Rate Stability of CMP for ULSI Silicon Substrate

摘要：

The polishing process of Si substrate is introduced and its mechanism is analyzed theoretically in this paper. The regularity of removal rate of CMP by using circulation polishing is obtained through experimental study. Then, the stability of removal rate and its influence factors are analyzed systematically. Experiment results show that pH value, polishing temperature and viscosity are the main factors affecting the stability of removal rate. Finally, improving solutions for the removal rate fluctuation are presented.

作者: Jianwei Zhou Qiaoshuo Shi Qiaoyun Zhao

作者单位: Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China School of Computer Science and Software Engineering, Hebei University of Technology, Tianjin 300130,

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 126-128

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）