Studies on SIC Process for the Improvement of VPNP Performance

摘要：

An VPNP device optimization technology was presented for complementary bipolar process. Based on process and device simulation, an SIC process for high speed NPN transistor improvement was applied to the optimization of VPNP transistor. Sub-micron VPNP trasistor increases its feature frequency by 30％, namely, more than 3.0GHz. It features breakdown voltage of BVceo>6.0V, which results to a wider application in complementary bipolar process.

关键词： Analog IC Complementary Bipolar(CB) Selectively Implanted Collecter(SIC)

作者: Li Rongqiang Zhong Yi Xian Wenjia Liu Yukui

作者单位: National Laboratory of Analog ICs.Chongqing 400060,P.R.China Sichuan Institute of Solid State National Laboratory of Analog ICs.Chongqing 400060,P.R.China Chongqing University,Chongqing 4000 National Laboratory of Analog ICs.Chongqing 400060,P.R.China Sichuan Institute of Solid State

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 132-134

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）