An Improved Charge Pump Circuit for Non-volatile Memories in RFID Tags

摘要：

In this paper, we present an improved charge pump circuit for the non-volatile memories in RFID tags. The circuit consists of a single pumping branch without auxiliary capacitors and operates with a simple two-phase clock. The internal high voltages are used to control the gate and bulk terminals of the charge transfer switch. As a result, the threshold voltage loss and the leakage currents are eliminated. An eight-stage charge pump circuit with each pumping capacitance of 0.5pF has been implemented in a 0.18μm standard CMOS process. The measured results show that the output voltage reaches 8.4V with 44MΩ resistive load under the supply voltage of 1.5V and clock frequency of 0.78MHz. The clock driver and the charge pump totally consume a current of 3 μA.

作者: Peng Feng Yun-Long Li Nan-Jian Wu

作者单位: State Key Laboratory for Super lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 363-365

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）