A 1.8V to 10V CMOS Level Shifter for RFID Transponders

摘要：

A 1.8V-to-10V high-voltage tolerant level shifter (HVT level shifter) is presented in this paper. This new topology of HVT level shifter makes all the transistors working in safe operating region, and consequently greatly enhances the circuits reliability. It has been fabricated in 0.18 μm CMOS process, and successfully integrated in an embedded EEPROM memory with 10 V programming/erasing voltages in the passive UHF RFID transponders.

作者: Junhua Liu Le Ye Zhixin Deng Jinshu Zhao Huailin Liao

作者单位: Institute of Microelectronics, Peking University, Beijing 100871, China Institute of Microelectronics,Peking University, Beijing 100871, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 491-493

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）