22 nm Node Si SOI Coplanar N Channel Vertical Dual Carrier Field Effect Transistor and Its SOC with Channel Length Less Than 10 nm for Communication Applications

摘要：

22nm node Si SOI Coplanar N Channel Vertical Dual Carrier Field Effect Transistors (VDCFET) and its SOC with effective channel length less than lOnm for communication applications are presented.

作者: Y.F. Zhao J. Xu R. Yang G.H. Li D.H. Huang C. Huang Y.Z. Xu D. Bai Y.H. Yang H. Xu S.K. Shen B. Mon H. Fan P. Xu

作者单位: Beijing Microelectronic Institute, Beijing, China Tsing Hua University, Beijing, China Beijing Normal University, Beijing, China Florence Science and Technology, San Jose, USA China Aerospace Corporation, Beijing, China Beijing Microelectronics Center, Beijing, China China Academy of Science, Beijing, China Z.H. Communication, Zhen Cheng, China Beijing C.T. University, Beijing, China

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 608-610

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）