High Performance SOI RF Switches for Wireless Applications (Invited Paper)

摘要：

This paper describes 0.18um CMOS silicon-on-insulator (SOI) technology and design techniques for SOI RF switch designs for wireless applications. The measured results of SP4T (single pole four throw) and SP8T (single pole eight throw) switch reference designs are presented. It has been demonstrated that SOI RF switch performance, in terms of power handling, linearity, insertien loss and isolation, is very competitive with those utilizing GaAs pHEMT and silicon-on-sapphire (SOS) technologies, while maintaining a cost and manufacturing advantage.

作者: Dawn Wang Randy Wolf Alvin Joseph Alan Botula Peter Rabbeni Myra Boenke David Harame Jim Dunn

作者单位: IBM, 5 Technology Park Dr, Westford, MA 01886, USA IBM, 1000 River St, Essex Junction, VT 05452, USA

会议类型: 国际会议

会议名称: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

会议地点: 上海

会议语种:英文

页码: 611-614

在线出版日期: 2010-11-01（万方平台首次上网日期，不代表论文的发表时间）